Abstract: Insulated gate bipolar transistor (IGBT) modules are key components in power electronic converters. The wire-bond packaging failures of IGBT module, such as bond wire related failures, will ...

Abstract: The die-attach layer is a vulnerable structure that is important to the reliability of an insulated-gate bipolar transistor (IGBT) module. A new failure mechanism named fatigue crack network ...

In recent years, with the rapid development of new energy vehicles, IGBT, as the main cost component of the controller for new energy vehicles, has also ushered in an outbreak. It is expected that by ...

A lack of planarity along the interface between the solder and the ceramic raft in an IGBT module is a common anomaly that can make heat dissipation uneven across the die and cause the die to crack.

System-in-package (SiP) and other advanced packaging technologies are putting more components together in tighter spaces than previously seen. Often these packages are contained in a module, which is ...

This paper presents a novel 3-phase IGBT module called the SPM (Smart Power Module). This is a new design developed to provide a very compact, low cost, high perfor- mance and reliable motor drive ...

Mitsubishi Electric is to start sampling a 1200V IGBT power module for industrial applications. The LV100 will start sampling on 15 th February for solar and other renewable-energy power-supply ...

At PCIM Europe, Power Integrations announced the SCALE EV family of gate-driver boards for Infineon EconoDUAL modules. The SCALE EV family consists of automotive-qualified, dual-channel plug-and-play ...

NUREMBERG, Germany--(BUSINESS WIRE)--PCIM 2023 – Power Integrations (NASDAQ: POWI), the leader in gate-driver technology for medium- and high-voltage inverter applications, today introduced the ...

TOKYO--(BUSINESS WIRE)--Mitsubishi Electric Corporation (TOKYO: 6503) announced today that beginning February 15 it will provide samples of its new LV100-type 1.2-kV IGBT module as an industrial-use ...